Enhancement of Program Speed in Dopant-Segregated Schottky-Barrier (DSSB) FinFET SONOS for NAND-Type Flash Memory

A dopant-segregated (DS) Schottky-barrier (DSSB) FinFET SONOS for NAND flash memory with a proposed architecture is demonstrated for the first time. A DSSB technique with a nickel-silicided source/drain (S/D) is integrated in the FinFET with a 30-50-nm range of fin width. Compared with the conventio...

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Bibliographic Details
Published in:IEEE electron device letters 2009-01, Vol.30 (1), p.78-81
Main Authors: Choi, Sung-Jin, Han, Jin-Woo, Kim, Sungho, Jang, Moon-Gyu, Kim, Jin Soo, Kim, Kwang Hee, Lee, Gi Sung, Oh, Jae Sub, Song, Myeong Ho, Park, Yun Chang, Kim, Jeoung Woo, Choi, Yang-Kyu
Format: Article
Language:English
Subjects:
Applied sciences
Bending
Compound structure devices
D region
Decision support systems
Design. Technologies. Operation analysis. Testing
Devices
Dopant segregated (DS)
Drains
Electronics
Electrons
Exact sciences and technology
FinFET
FinFETs
Flash memory
Flash memory (computers)
Hot electrons
Integrated circuits
Integrated circuits by function (including memories and processors)
Low voltage
MOSFET circuits
NAND Flash
Nanoscale devices
Nickel
Nonvolatile memory
Programming
Schottky-barrier MOSFET
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
silicon-oxide-nitride-oxide-silicon (SONOS)
SONOS devices
SONOS memory
Threshold voltage
Transistors
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Description
Summary:A dopant-segregated (DS) Schottky-barrier (DSSB) FinFET SONOS for NAND flash memory with a proposed architecture is demonstrated for the first time. A DSSB technique with a nickel-silicided source/drain (S/D) is integrated in the FinFET with a 30-50-nm range of fin width. Compared with the conventional FinFET SONOS, the DSSB FinFET SONOS boasts very fast programming time with low voltage. For a programming state, hot electrons triggered by sharp band bending at the DS S/D region are used. As a result, a threshold voltage ( V th ) shift of 4.5 V is achieved in a fast programming time of 100 ns.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2008.2008667