Catastrophic latchup in CMOS analog-to-digital converters

Heavy-ion latchup is investigated for analog-to-digital converters. Differences in cross section for various ions show that charge is collected at depths beyond 50 /spl mu/m, causing the cross section to be underestimated unless long-range ions are used. Current distributions, thermal imaging, and d...

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Bibliographic Details
Published in:IEEE transactions on nuclear science 2001-12, Vol.48 (6), p.1833-1840
Main Authors: Miyahira, T.F., Johnston, A.H., Becker, H.N., LaLumondiere, S.D., Moss, S.C.
Format: Article
Language:English
Subjects:
Analog to digital conversion
Analog-digital conversion
Circuits
Converters
Cross sections
Current density
Current distribution
Failure
Laboratories
Metallization
Metallizing
NASA
Power supplies
Propulsion
Scanning electron microscopy
Space technology
Substrates
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Summary:Heavy-ion latchup is investigated for analog-to-digital converters. Differences in cross section for various ions show that charge is collected at depths beyond 50 /spl mu/m, causing the cross section to be underestimated unless long-range ions are used. Current distributions, thermal imaging, and diagnostic tests with a pulsed laser were used to identify latchup-sensitive regions. Latchup in one of the circuit types was catastrophic, even when the power was turned off within 2 ms of a latchup event. Examination of damaged devices with a scanning electron microscope showed that the failures occurred in metallization and contact regions. Current density for failure agrees with pulsed current metallization stress data in the literature.
ISSN:0018-9499
1558-1578
DOI:10.1109/23.983139