Characteristics on electrical resistance change of Ag doped chalcogenide thin film application for programmable metallization cell

Programmable Metallization Cell (PMC) Random Access Memory is based on the electrochemical growth and removal of nanoscale metallic pathways in thin films of solid electrolyte. This paper investigates the resistance change characteristics with applied voltage bias on Ag/Ge–Se and Ag/As–Se chlacogeni...

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Bibliographic Details
Published in:Journal of electroceramics 2009-10, Vol.23 (2-4), p.322-325
Main Authors: Choi, Hyuk, Nam, Ki-Hyun, Koo, Yong-Woon, Chung, Hong-Bay
Format: Article
Language:English
Subjects:
Annealing
Ceramics
Characterization and Evaluation of Materials
Chemistry and Materials Science
Composites
Crystallography and Scattering Methods
Electric potential
Electrochemistry
Electrolytic cells
Glass
Materials Science
Metallizing
Nanostructure
Natural Materials
Optical and Electronic Materials
Radio frequency identification
Random access memory
Silver
Thin films
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Summary:Programmable Metallization Cell (PMC) Random Access Memory is based on the electrochemical growth and removal of nanoscale metallic pathways in thin films of solid electrolyte. This paper investigates the resistance change characteristics with applied voltage bias on Ag/Ge–Se and Ag/As–Se chlacogenide thin film structure and describes the electrical characteristics of PMC-RAM made from these materials following annealing at 150 °C. As a result, it was obtained that R reverse / R forward ratio which represent by reversible resistance change was about 10 6 , which ratio value can be get a high sensing margin when PMC-RAM detect the data. PMC-RAM technology promises to be non-volatile, low current and potentially, low cost for the next generation of nonvolatile memory application such as RFID chip to replace EEPROM.
ISSN:1385-3449
1573-8663
DOI:10.1007/s10832-008-9448-8