Application of RADSAFE to Model the Single Event Upset Response of a 0.25 $\mu$m CMOS SRAM

The RADSAFE simulation framework is described and applied to model SEU in a 0.25 mum CMOS 4 Mbit SRAM. For this circuit, the RADSAFE approach produces trends similar to those expected from classical rectangular parallelepiped models, but more closely represents the physical mechanisms responsible fo...

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Bibliographic Details
Published in:IEEE transactions on nuclear science 2007-08, Vol.54 (4), p.898-903
Main Authors: Warren, Kevin M., Weller, Robert A., Sierawski, Brian D., Reed, Robert A., Mendenhall, Marcus H., Schrimpf, Ronald D., Massengill, Lloyd W., Porter, Mark E., Wilkinson, Jeffrey D., LaBel, Kenneth A., Adams, James H.
Format: Article
Language:English
Subjects:
Circuits
CMOS
Computer simulation
Mathematical models
Parallelepipeds
Single event upsets
Static random access memory
Trends
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Summary:The RADSAFE simulation framework is described and applied to model SEU in a 0.25 mum CMOS 4 Mbit SRAM. For this circuit, the RADSAFE approach produces trends similar to those expected from classical rectangular parallelepiped models, but more closely represents the physical mechanisms responsible for SEU in the SRAM circuit.
ISSN:0018-9499
DOI:10.1109/TNS.2006.889810