Fully depleted silicon on insulator MOSFETs on (1 1 0) surface for hybrid orientation technologies

• Published in: Solid-state electronics 2011-05, Vol.59 (1), p.8-12
• Main Authors: Signamarcheix, T., Andrieu, F., Biasse, B., Cassé, M., Papon, A.-M., Nolot, E., Ghyselen, B., Faynot, O., Clavelier, L.
• Format: Article
• Language: English
• Subjects: Alternative technology; Applied sciences; Deep-amorphization; Electronics; Exact sciences and technology; Gain; Hybrid orientation technologies; Insulators; Metal oxide semiconductors; MOSFETs; Orientation; Oxides; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Silicon; SOI; SPER; Transistors
• ISSN: 0038-1101; 1879-2405
• DOI: 10.1016/j.sse.2011.01.013

► We examine the performances of fully-depleted transistor made on specific (1 1 0) oriented SOI. ► Impact of a deep amorphization and SPER is studied on SOI substrates. ► An alternative process to locally convert the orientation of an SOI film is studied. An alternative technology is studied here to elaborate hybrid orientation silicon on insulator (SOI) films above a continuous buried oxide (BOX). To this purpose, a “deep-amorphization” followed by solid phase epitaxial regrowth (SPER) of SOI films is investigated. The effect of the deep-amorphization and SPER on p-type fully-depleted metal oxide semiconductor field effect transistors (FD-MOSFETs) electrical characteristics is presented and discussed for both (1 0 0) and (1 1 0) oriented SOI films. High performance pMOS were realized on (1 1 0) substrates. Our results show a +30% gain on the drive current for the (1 1 0) surface orientation, and we further demonstrate that no degradation of the performance is introduced by the amorphization and SPER processes.