Improved effective mobility extraction in MOSFETs

The standard method of extracting carrier effective mobility from electrical measurements on MOSFETs is reviewed and the assumptions implicit in this method are discussed. A novel technique is suggested that corrects for the difference in drain bias during IV and CV measurements. It is further shown...

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Bibliographic Details
Published in:Solid-state electronics 2009-12, Vol.53 (12), p.1252-1256
Main Authors: Thomas, S.M., Whall, T.E., Parker, E.H.C., Leadley, D.R., Lander, R.J.P., Vellianitis, G., Watling, J.R.
Format: Article
Language:English
Subjects:
Bias
Diffusion
Drains
Electrical measurement
Electronics
Extraction
finFET
Mobility
MOSFET
MOSFETs
SOI
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Summary:The standard method of extracting carrier effective mobility from electrical measurements on MOSFETs is reviewed and the assumptions implicit in this method are discussed. A novel technique is suggested that corrects for the difference in drain bias during IV and CV measurements. It is further shown that the lateral field and diffusion corrections, which are both commonly neglected, in fact cancel. The effectiveness of the proposed technique is demonstrated by application to data measured on a quasi-planar SOI finFET at 300 K and 4 K.
ISSN:0038-1101
1879-2405
DOI:10.1016/j.sse.2009.09.014