Highly crystalline and soluble dodecylbenzene sulfonic acid doped poly(o-toluidine)

• Published in: Synthetic metals 2010-12, Vol.160 (23), p.2658-2663
• Main Authors: Ebrahim, Sh. M., Gad, A., Morsy, A.
• Format: Article
• Language: English
• Subjects: Aluminum; Applied sciences; Conducting polymers; Contact resistance; Crystal structure; Diffraction; Diodes; Dodecylbenzene sulfonic acid; Electronics; Exact sciences and technology; Organic polymers; Oxidants; Physicochemistry of polymers; Poly(o-toluidine); Polymerization; Polymers with particular properties; Preparation, kinetics, thermodynamics, mechanism and catalysts; Schottky diode; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Sulfonic acid
• ISSN: 0379-6779; 1879-3290
• DOI: 10.1016/j.synthmet.2010.10.021

Dodecylbenzene sulfonic acid (DBSA) doped poly(o-toluidine) (POT) was synthesized by oxidative polymerization technique. The optical, structural, morphological, thermal and electrical properties of the POT-DBSA have been investigated. It was found that conducting emeraldine salt of POT-DBSA is stable in chloroform. X-ray diffraction showed that the POT-DBSA is a highly crystalline polymer due to formation of H-bonding across chains. The scanning electron micrograph reveals a flaky like feature with few globular structures and the size of the grain was about 3 μm. The highest conductivity of POT-DBSA was found to be 1.88 × 10 −3 S/cm at 1:1 molar ratio of oxidant to o-toludine and at 0.18 M of DBSA. Schottky diode based on POT-DBSA was fabricated using Al as Schottky contact and Cu as an Ohmic contact. The junction parameters including ideality factor and barrier height of the diode was 3.0 and 0.989 eV, respectively.