Study on oxygen source and its effect on film properties of ZnO deposited by radio frequency magnetron sputtering

► Sputtered ZnO films are mainly formed by a chemical reaction of Zn with oxygen. ► ZnO changed O-rich to Zn-rich with decreasing rf-power and oxygen partial pressure. ► Broad PL emission was observed when the ZnO changed from O-rich to Zn-rich. ► Origin of broad PL emission thought to be an increas...

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Bibliographic Details
Published in:Applied surface science 2011-11, Vol.258 (2), p.695-699
Main Authors: Kamada, Yudai, Furuta, Mamoru, Hiramatsu, Takahiro, Kawaharamura, Toshiyuki, Wang, Dapeng, Shimakawa, Shin-ichi, Li, Chaoyang, Fujita, Shizuo, Hirao, Takashi
Format: Article
Language:English
Subjects:
Atomic force microscope (AFM)
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Condensed matter: structure, mechanical and thermal properties
Cross-disciplinary physics: materials science
rheology
Deposition
Exact sciences and technology
Magnetron sputtering
Optical properties
Oxygen partial pressure
Partial pressure
Photoluminescence (PL)
Physics
rf-power
Sputtering
Stoichiometry
Thermal desorption spectroscopy (TDS)
Thin films
Vacancies
Zinc oxide
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Summary:► Sputtered ZnO films are mainly formed by a chemical reaction of Zn with oxygen. ► ZnO changed O-rich to Zn-rich with decreasing rf-power and oxygen partial pressure. ► Broad PL emission was observed when the ZnO changed from O-rich to Zn-rich. ► Origin of broad PL emission thought to be an increase of oxygen vacancies. ► Chemical stoichiometry will help us to understand formation of intrinsic defects in ZnO. The structural and optical properties of ZnO thin films deposited at various oxygen partial pressure and rf-power of rf magnetron sputtering were investigated. The sputtered ZnO films are mainly formed with the oxygen which was supplied from a sputtering gas; therefore the film stoichiometry can be controlled by the oxygen partial pressure and rf-power. From photoluminescence study, it was found that the wide emission band above 550nm was observed due to an increase of oxygen vacancies when the ZnO film changed from O-rich to Zn-rich. The chemical stoichiometry of the film will help us to understand the formation mechanism of intrinsic defects in ZnO films.
ISSN:0169-4332
1873-5584
DOI:10.1016/j.apsusc.2011.07.100