Thermal stability of intermediate band behavior in Ti implanted Si

Ti implantation in Si with very high doses has been performed. Subsequent Pulsed Laser Melting (PLM) annealing produces good crystalline lattice with electrical transport properties that are well explained by the Intermediate Band (IB) theory. Thermal stability of this new material is analyzed by me...

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Bibliographic Details
Published in:Solar energy materials and solar cells 2010-11, Vol.94 (11), p.1907-1911
Main Authors: Olea, J., Pastor, D., Mártil, I., González-Díaz, G.
Format: Article
Language:English
Subjects:
Annealing
Electrical measurement
Implantation
Intermediate band
Ion implantation
Production management
Pulsed laser melting
Silicon
Solar cells
Thermal stability
Titanium
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Summary:Ti implantation in Si with very high doses has been performed. Subsequent Pulsed Laser Melting (PLM) annealing produces good crystalline lattice with electrical transport properties that are well explained by the Intermediate Band (IB) theory. Thermal stability of this new material is analyzed by means of isochronal annealing in thermodynamic equilibrium conditions at increasing temperature. A progressive deactivation of the IB behavior is shown during thermal annealing, and structural and electrical measurements are reported in order to find out the origin of this result.
ISSN:0927-0248
1879-3398
DOI:10.1016/j.solmat.2010.06.045