Fabrication and characterization of transparent MEH-PPV/n-GaN (0001) heterojunction devices

► I have fabricated MEH-PPV/n-GaN/Au heterostructure by spin coating. ► The current–voltage (I–V) characteristic of MEH-PPV/n-GaN shows diode-like behavior. ► MEH-PPV interfacial layer affects electrical parameters of the Au/n-GaN structures. ► I–V measurements suggest that the charge transport mech...

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Bibliographic Details
Published in:Optical materials 2012-03, Vol.34 (5), p.878-883
Main Author: Soylu, Murat
Format: Article
Language:English
Subjects:
Atomic Force Microscopy (AFM)
Charge (electric)
Deposition
Diodes
Electric charge
Electrical properties
Electronics
Heterojunction
Heterojunction devices
Heterojunctions
Thin films
Volt-ampere characteristics
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Summary:► I have fabricated MEH-PPV/n-GaN/Au heterostructure by spin coating. ► The current–voltage (I–V) characteristic of MEH-PPV/n-GaN shows diode-like behavior. ► MEH-PPV interfacial layer affects electrical parameters of the Au/n-GaN structures. ► I–V measurements suggest that the charge transport mechanism is controlled by TCLC. n-GaN/MEH-PPV thin film heterojunction diode was fabricated by depositing MEH-PPV thin film using spin-coating process on n-GaN (0001). The junction properties were evaluated by measuring I–V characteristics. I–V characteristics exhibited well defined rectifying behavior with a barrier height of 0.89eV and ideality factor of 1.7. The optical band gap of the MEH-PPV film using optical absorption method was found to be 2.2eV and the fundamental absorption edge in the film is formed by the direct allowed transitions. At higher electric fields, the conductivity mechanism of the film shows a trap charge limited current mechanism. The obtained results indicate that the electronic parameters of the heterojunction diode are affected by properties of MEH-PPV organic film.
ISSN:0925-3467
1873-1252
DOI:10.1016/j.optmat.2011.11.030