Characterization of 4H-SiC Epitaxial Layers and High-Resistivity Bulk Crystals for Radiation Detectors

• Published in: IEEE transactions on nuclear science 2012-08, Vol.59 (4), p.1591-1596
• Main Authors: Mandal, Krishna C., Muzykov, Peter G., Krishna, Ramesh M., Terry, J. Russell
• Format: Article
• Language: English
• Subjects: Chemical vapor deposition; Comet tails; Crystal defects; Crystals; Defects; Detectors; Electrical resistivity; electron beam induced current (EBIC); Electron traps; Epitaxial layers; Optical microscopy; Segregations; semi-insulating (SI); Semiconductors; Silicon; Silicon carbide; silicon carbide (SiC); soft X-ray detectors; Temperature measurement; thermally stimulated current (TSC)
• ISSN: 0018-9499; 1558-1578
• DOI: 10.1109/TNS.2012.2202916

Defect and electrical characterization of bulk semi-insulating (SI) 4H-SiC crystals and SI and n-type 4H-SiC epitaxial layers grown by chemical vapor deposition (CVD) on highly doped (0001) 4H-SiC substrates is reported. Optical microscopy, electron beam induced current (EBIC) imaging, current-voltage ( I - V ) measurements, thermally stimulated current (TSC) spectroscopy (94 K-620 K), Hall effect, and van der Pauw measurements have been conducted for characterization and defect correlation studies. Both epitaxial layers exhibited relatively shallow levels related to Al, B, L - and D-centers. Deep level centers in the n-type epitaxial layer peaked at {\sim} 400 K ( E_{a} \sim 1.1 eV), and {\sim} 470 K were correlated with IL_{2} defect and 1.1 eV center in high-purity bulk SI 4H-SiC. The SI epitaxial layer exhibited peak at {\sim} 290 K ( E_{a} = 0.82\hbox{--}0.87 eV) that was attributed to IL_{1} and HK2 centers, and at {\sim} 525 K that was related to intrinsic defects and their complexes with energy levels close to the middle of the band-gap. Results of EBIC and optical microscopy showed segregation of threading dislocations around comet tail defects in the n-type epitaxial layer. The I - V characteristics of the devices on SI epitaxial layer exhibited steps corresponding to the ultimate trap filling of deep centers. The high-temperature resistivity measurements of bulk SI 4H-SiC sample revealed resistivity hysteresis that was attributed to the filling of the deep-level electron trap centers. The responsivity of the n-type epitaxial 4H-SiC detector in the soft X-ray energy range is reported for the first time.