Shallow-Trench-Isolation (STI)-Induced Mechanical-Stress-Related Kink-Effect Behaviors of 40-nm PD SOI NMOS Device

This brief reports the shallow-trench-isolation (STI)-induced mechanical-stress-related kink-effect behaviors of the 40-nm PD silicon on insulator (SOI) NMOS device. As verified by the experimentally measured data and the 2-D simulation results, the kink-effect behaviors occur at a higher in the sat...

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Bibliographic Details
Published in:IEEE transactions on electron devices 2008-06, Vol.55 (6), p.1558-1562
Main Authors: Su, V.C., Kuo, J.B., Lin, I.S., Guan-Shyan Lin, Chen, D.C., Chune-Sin Yeh, Cheng-Tzung Tsai, Ma, M.
Format: Article
Language:English
Subjects:
Applied sciences
CMOSFET
Devices
Electronics
Exact sciences and technology
Insulators
Saturation
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Silicon
silicon on insulator (SOI) technology
Simulation
Stresses
Transistors
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Summary:This brief reports the shallow-trench-isolation (STI)-induced mechanical-stress-related kink-effect behaviors of the 40-nm PD silicon on insulator (SOI) NMOS device. As verified by the experimentally measured data and the 2-D simulation results, the kink-effect behaviors occur at a higher in the saturation region and show a less steep subthreshold slope for the 40-nm PD device with a smaller S/D length of 0.17 due to the weaker function of the parasitic bipolar device as a result of the larger body-source bandgap-narrowing effect coming from the higher STI-induced mechanical stress.
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2008.922858