Experimentally Measured Input Referred Voltage Offsets and Kickback Noise in RHBD Analog Comparator Arrays

Analog comparator arrays fabricated on a bulk CMOS 130-nm are measured to quantify input-referred offsets due to transistor variation and kickback noise. Comparators using RHBD edgeless and conventional two-edge transistors are compared to determine the impact on the circuit behavior. Both random va...

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Bibliographic Details
Published in:IEEE transactions on nuclear science 2007-12, Vol.54 (6), p.2073-2079
Main Authors: Hindman, N.D., Ziyan Wang, Clark, L.T., Allee, D.R.
Format: Article
Language:English
Subjects:
Analog comparator offset
Analog integrated circuits
Analog-digital conversion
analog-to-digital converters
Arrays
Circuit noise
Comparators
Equivalence
Integrated circuit noise
integrated circuit radiation effects
Ionizing radiation
kickback noise
Noise
Noise measurement
Offsets
Parasitic capacitance
Power transmission lines
Radiation hardening
Semiconductor devices
Transistors
Voltage
Voltage measurement
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Description
Summary:Analog comparator arrays fabricated on a bulk CMOS 130-nm are measured to quantify input-referred offsets due to transistor variation and kickback noise. Comparators using RHBD edgeless and conventional two-edge transistors are compared to determine the impact on the circuit behavior. Both random variation and kickback noise are slightly larger than for an equivalent design using two-edge transistors. The input-referred offsets are shown to be completely systematic.
ISSN:0018-9499
1558-1578
DOI:10.1109/TNS.2007.908654