A Novel Nanoscale 4H-SiC-on-Insulator MOSFET Using Step Doping Channel

In this paper, we present the unique features exhibited by a novel step doping channel technique in nanoscale silicon carbide metal-oxide-semiconductor field-effect transistors (SDC-MOSFETs) for reaching a suitable threshold voltage upon device scaling and reliability improvement. The device demonst...

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Bibliographic Details
Published in:IEEE transactions on device and materials reliability 2010-03, Vol.10 (1), p.92-95
Main Authors: Orouji, A.A., Elahipanah, H.
Format: Magazinearticle
Language:English
Subjects:
Channel engineering
Channels
CMOS technology
Degradation
Devices
Doping
FETs
hot carrier
Impact ionization
Leakage current
metal-oxide-semiconductor field-effect transistor (MOSFET)
Monte Carlo methods
MOSFET circuits
MOSFETs
Nanocomposites
Nanomaterials
Nanostructure
Silicon carbide
silicon carbide (SiC)
step doping
Threshold voltage
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Summary:In this paper, we present the unique features exhibited by a novel step doping channel technique in nanoscale silicon carbide metal-oxide-semiconductor field-effect transistors (SDC-MOSFETs) for reaching a suitable threshold voltage upon device scaling and reliability improvement. The device demonstrates large enhancements in performance areas such as output resistance, hot-electron reliability, and threshold voltage upon channel-length or drain-voltage variation. Also, we describe an optimization technique in SDC-MOSFET for improving the threshold-voltage characterization. It was also found that the device performance is very much dependent upon the SDC region parameters. Results show that the most difficult problem of using silicon carbide in VLSI circuits could be solved and that the proposed silicon carbide MOSFETs can work very well in the nanoscale regime.
ISSN:1530-4388
1558-2574
DOI:10.1109/TDMR.2009.2035511