Theoretical Study of a Thermophysical Property of Molten Semiconductors

This paper deals with theoretical approach to surface tension of molten silicon and germanium, and contributes to this field, which is very important. A theoretical calculation for determining the surface tension of high-temperature semiconductor melts, such as molten silicon and germanium, in the t...

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Bibliographic Details
Published in:Journal of metallurgy 2011-01, Vol.2011 (2011), p.1-5
Main Authors: Aqra, Fathi, Ayyad, Ahmed
Format: Article
Language:English
Subjects:
Germanium
Mathematical analysis
Mathematical models
Melts
Metallurgy
Metals
Semiconductors
Silicon
Studies
Surface tension
Temperature
Thermophysical properties
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Summary:This paper deals with theoretical approach to surface tension of molten silicon and germanium, and contributes to this field, which is very important. A theoretical calculation for determining the surface tension of high-temperature semiconductor melts, such as molten silicon and germanium, in the temperature range 1687–1825 K and 1211–1400 K, respectively, is described. The calculated temperature-dependence surface tension data for both Si and Ge are expressed as γ=876-0.32  (T-Tm) and γ=571-0.074  (T-Tm) (mJ m−2), respectively. These values are in consistence with the reported experimental data (720–875 for Si and 560–632 mJ m−2 for Ge). The calculated surface tension for both elements decreases linearly with temperature.
ISSN:1687-9465
1687-9473
DOI:10.1155/2011/436704