Impact of velocity saturation and hot carrier effects on channel thermal noise model of deep sub-micron MOSFETs

• Published in: Solid-state electronics 2012-06, Vol.72, p.8-11
• Main Authors: Ong, S.N., Yeo, K.S., Chew, K.W.J., Chan, L.H.K., Loo, X.S., Boon, C.C., Do, M.A.
• Format: Article
• Language: English
• Subjects: Applied sciences; Carriers; Channel thermal noise; Channels; Electronics; Exact sciences and technology; High frequency noise modeling; Hot carrier effect; Modulation; MOSFET; MOSFETs; Noise; Saturation; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Thermal noise; Transistors; Velocity saturation effect
• ISSN: 0038-1101; 1879-2405
• DOI: 10.1016/j.sse.2012.02.008

► Velocity saturation effect (VSE) cause reduction of channel thermal noise. ► Hot carrier effect (HCE) cause increment of channel thermal noise. ► Noise reduction due to VSE is completely cancelled out by noise increment due to HCE. ► Model with channel length modulation only is sufficient for noise prediction. This paper discusses the impact of the short channel effects, such as channel length modulation (CLM), velocity saturation effect (VSE) and hot carrier effect (HCE), on the channel thermal noise model of short channel MOSFETs. Based on the fundamental thermal noise theory, the channel thermal noise models are derived in four different cases considering the effect of CLM only, CLM and VSE, CLM and HCE, and the combine effect of CLM, VSE and HCE. The noise reduction due to the VSE is found to be completely cancelled out by the noise increment due to the HCE for all the operating conditions.