0.15- -Gate InAlAs/InGaAs/InP E-HEMTs Utilizing Ir/Ti/Pt/Au Gate Structure

High-current 0.15-mum-gate enhancement-mode high-electron mobility transistors utilizing Ir/Ti/Pt/Au gate metallization were fabricated using a new process including a high-temperature gate anneal that is required for Schottky-barrier height enhancement for the Ir-based gate contact.

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Bibliographic Details
Published in:IEEE electron device letters 2006-11, Vol.27 (11), p.873
Main Authors: Kim, Seiyon, Adesida, I
Format: Article
Language:English
Subjects:
Annealing
Contact
Devices
Gates
Gold
Iridium
Platinum
Titanium
Online Access:Get full text
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Description
Summary:High-current 0.15-mum-gate enhancement-mode high-electron mobility transistors utilizing Ir/Ti/Pt/Au gate metallization were fabricated using a new process including a high-temperature gate anneal that is required for Schottky-barrier height enhancement for the Ir-based gate contact.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2006.883563