Cost-Effective Integrated RF Power Transistor in 0.18- CMOS Technology

A novel MOS power transistor with high breakdown voltage is proposed and manufactured in a standard 0.18-mum CMOS process without any additional masks or extra process steps. A "U"-type n super(-) drift region formed with shallow trench isolation (STI) layer and n-well is adopted to improv...

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Bibliographic Details
Published in:IEEE electron device letters 2006-10, Vol.27 (10), p.856
Main Authors: Yan, Tao, Liao, Huailin, Xiong, Yong Zhong, Zeng, Rong, Shi, Jinglin, Huang, Ru
Format: Article
Language:English
Subjects:
Breakdown
CMOS
Electric potential
Metal oxide semiconductors
Power gain
Power transistors
Radio frequencies
Voltage
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Summary:A novel MOS power transistor with high breakdown voltage is proposed and manufactured in a standard 0.18-mum CMOS process without any additional masks or extra process steps. A "U"-type n super(-) drift region formed with shallow trench isolation (STI) layer and n-well is adopted to improve the breakdown voltage. A MOS transistor with 11.6-V breakdown voltage, 18-GHz cutoff frequency, and 30-GHz maximum oscillation frequency has been demonstrated. In addition, it has 11.5-dB power gain, 19.3-dBm output power at 2.45 GHz with power-added efficiency (PAE) of 55%, and 8.3-dB power gain 18.7-dBm output power at 5.8 GHz with PAE of 38%. The presented RF power transistor is cost effective and can be conveniently applied in the power amplifier integration for RF SoC
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2006.882568