Characterization of Inversion-Layer Capacitance of Electrons in High- k/Metal Gate Stacks

The inversion-layer capacitance C inv of electrons in high- k /metal gate stacks (HKMGs) is studied theoretically and experimentally from the viewpoint of the penetration of electrons into the dielectrics. The numerical calculation of C inv in the dielectric/substrate bilayer structure has clarified...

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Bibliographic Details
Published in:IEEE transactions on electron devices 2010-11, Vol.57 (11), p.2814-2820
Main Authors: Iijima, R, Edge, L F, Paruchuri, V, Takayanagi, M
Format: Article
Language:English
Subjects:
Applied sciences
Boundaries
Capacitance
Consistency
Dielectrics
Electronics
Equivalent oxide thickness
Exact sciences and technology
gate capacitance
Gates
High K dielectric materials
high- k /metal gate stack (HKMG)
high- k dielectric
inversion layer
Mathematical analysis
metal gate
metal-oxide-semiconductor field-effect transistor (MOSFET)
Modulation
MOSFETs
Penetration
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Silicon
Stacks
Substrates
Transistors
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Summary:The inversion-layer capacitance C inv of electrons in high- k /metal gate stacks (HKMGs) is studied theoretically and experimentally from the viewpoint of the penetration of electrons into the dielectrics. The numerical calculation of C inv in the dielectric/substrate bilayer structure has clarified the influence of penetration on C inv . C inv in an HKMG is evaluated experimentally and is compared with the computational predictions in terms of the dependence on the dielectric boundary and the silicon crystal orientation. The consistency of the experiment and the calculation is the first evidence for the considerable modulation of C inv due to penetration in the actual HKMG. Moreover, the dependence of C inv on substrate biasing is investigated. The detailed analysis of C inv in the system where the confinement of the inversion layer is intentionally changed has led to a further understanding of C inv determined by penetration.
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2010.2064317