A novel double offset-implanted source/drain technology for reduction of gate-induced drain-leakage with 0.12-μm single-gate low-power SRAM device

• Published in: IEEE electron device letters 2002-12, Vol.23 (12), p.719-721
• Main Authors: Seo, Sang-Hun, Yang, Won-Suk, Lee, Han-Sin, Kim, Moo-Sung, Koh, Kwang-Ok, Park, Seung-Hyun, Kim, Kyeong-Tae
• Format: Article
• Language: English
• Subjects: CMOS; CMOS technology; Devices; Drains; Etching; Implantation; Leakage current; MOS devices; MOSFETs; Optimization; Optimized production technology; Random access memory; Semiconductor devices; Silicon; Space technology; Static random access memory; Transistors
• ISSN: 0741-3106; 1558-0563
• DOI: 10.1109/LED.2002.805769

A new double offset-implanted (DOI) technology, which can effectively suppress the gate-induced drain-leakage (GIDL) current of buried-channel PMOS transistor in small-size CMOS devices, is proposed and developed with a 0.12-μm single-gate low-power SRAM device. The DOI scheme is characterized by the usage of the silicon nitride etch-stopper for the formation of borderless W-contact as offset spacer without supplementing auxiliary processes at p+ source/drain (S/D) implantation process after the n+ S/D one. It is assured that the DOI technology makes the gate-to-S/D overlap controllable, so that the GIDL current of PMOS transistor can remarkably be reduced. Furthermore, the enhancement of CMOS transistor performance was possible by reducing the sidewall reoxidation thickness of the gate-poly Si and optimizing the implantation conditions with this technology.