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Structural parameters and resistive switching phenomenon study on Cd(0.25)Co(0.75)Fe(2)O(4) ferrite thin film

Cadmium substituted cobalt ferrite thin film with nominal composition Cd(0.25)Co(0.75)Fe(2)O(4) has been grown on quartz substrate by chemical solution deposition and their structural and electrical properties have been investigated. Grazing incidence X-ray diffraction (XRD) confirmed single phase s...

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Bibliographic Details
Published in:Indian journal of pure & applied physics 2011-12, Vol.49 (12), p.833-840
Main Authors: Chhaya, U V, Mistry, B V, Bhavsar, K H, Gadhvi, M R, Lakhani, V K, Modi, K B, Joshi, U S
Format: Article
Language:English
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Summary:Cadmium substituted cobalt ferrite thin film with nominal composition Cd(0.25)Co(0.75)Fe(2)O(4) has been grown on quartz substrate by chemical solution deposition and their structural and electrical properties have been investigated. Grazing incidence X-ray diffraction (XRD) confirmed single phase spinel structure with nanometer grain size. Atomic force microscopic analysis revealed uniform nano structured growth of about 70 nm average crystallite size. The XRD data have been used to determine the distribution of cations among the tetrahedral and octahedral sites of the spinel lattice and various structural parameters. The cation distribution determined from X-ray diffraction line intensity calculations revealed, 60% octahedral sites occupancy of Cd(2+)-ions in the composition. Four terminal I-V measurements show hysteretic curves, suggesting high resistance state (HRS) and low resistance state (LRS) in the film with polarity dependence. Maximum resistance ratio, R(high)/R(low) of 57% was observed at room temperature in the Ag/Cd(0.25)Co(0.75)Fe(2)O(4)/Ag planar structure. Observed resistance switching is attributed to combined effects, viz., in the LRS, the major fraction of cadmium occupation and electron exchange between Fe(3+) and Fe(2+) at the B-sites, whereas the HRS shows Schottky-like conduction mechanism at the Ag/Cd(0.25)Co(0.75)Fe(2)O(4) interface.
ISSN:0019-5596