2.45-GHz CMOS Reflection-Type Phase-Shifter MMICs With Minimal Loss Variation Over Quadrants of Phase-Shift Range

CMOS reflection-type phase shifters with minimal insertion-loss variation over quadrants of phase-shift range are presented. Two performance enhancement techniques are proposed. First, the 3-dB quadrature hybrid is designed with a phase-compensated inductively coupled hybrid. Second, an impedance-tr...

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Bibliographic Details
Published in:IEEE transactions on microwave theory and techniques 2008-10, Vol.56 (10), p.2180-2189
Main Authors: WU, Jen-Chieh, CHIN, Ting-Yueh, CHANG, Sheng-Fuh, CHANG, Chia-Chan
Format: Article
Language:English
Subjects:
Applied sciences
Circuit properties
CMOS
CMOS technology
Design. Technologies. Operation analysis. Testing
Electric, optical and optoelectronic circuits
Electronics
Exact sciences and technology
Impedance
inductively coupled hybrid
Insertion loss
Integrated circuits
Loss measurement
Microwave circuits, microwave integrated circuits, microwave transmission lines, submillimeter wave circuits
Microwaves
MMICs
MOSFET circuits
Noise levels
Phase measurement
phase shifter
Phase shifters
Quadrants
quadrature coupler
Reactance
reflection-type phase shifter (RTPS)
Semiconductor device measurement
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
varactor
Varactors
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Summary:CMOS reflection-type phase shifters with minimal insertion-loss variation over quadrants of phase-shift range are presented. Two performance enhancement techniques are proposed. First, the 3-dB quadrature hybrid is designed with a phase-compensated inductively coupled hybrid. Second, an impedance-transformed pi-resonated varactor network is presented to provide a full 360deg phase range, using a MOSFET varactor with limited reactance variation range. The design considerations and simulation are described. Two experimental 2.45-GHz phase shifters were implemented in 0.18-mum CMOS technology. One has a measured phase-shift range of 120deg with the insertion loss of 5.6 plusmn 1.2 dB in 2.33-2.60 GHz and the other has a phase range larger than 340deg with the insertion loss of 10.6 plusmn 2 dB in 2.44-2.55 GHz. Both chips are extremely compact with sizes of 0.72 and 0.66 mm 2 , respectively, and consume zero dc power.
ISSN:0018-9480
1557-9670
DOI:10.1109/TMTT.2008.2003527