Fabrication of 6,13-bis(triisopropyl-silylethynyl)-pentacene thin-film transistors with the silver ink transfer method using a polymer stamp

• Published in: Physica status solidi. PSS-RRL. Rapid research letters 2011-03, Vol.5 (3), p.101-103
• Main Authors: Oh, Tae-Yeon, Kang, Nam-Su, Dong, Ki-Young, Chang, Seongpil, Park, Jung-Ho, Jung, Shin-Woo, Lee, Seung-Jun, Ju, Byeong-Kwon
• Format: Article
• Language: English
• Subjects: Acoustic microscopes; Applied sciences; Drying; Electrodes; Electronics; Exact sciences and technology; Gold; micro contact printing; Molds; monolayers; pentacene; self-organization; Semiconductor devices; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Silver; silver ink; Thin film transistors; Transistors
• ISSN: 1862-6254; 1862-6270; 1862-6270
• DOI: 10.1002/pssr.201004487

We fabricated 6,13‐bis(triisopropylsilylethynyl)–pentacene (TIPS–pentacene) thin film transistors using a direct metal transfer method. Using different metals, such as Au and Ag ink, electrode patterns are formed from the relief region of the polymer mold. TIPS–pentacene TFTs using the Ag ink transfer method show a similar performance to those using the Au metal transfer method. This method has advantages over the Au metal transfer method because it does not require vacuum equipment and a dry etching process. The self‐assembled monolayer (SAM) treated device exhibits a carrier mobility of 9.5 × 10–2 cm2/V · s, and an on/off ratio of 4.6 × 104. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim) In this Letter, the authors report on the fabrication of TIPS–pentacene thin‐film transistors (TFTs) using the Ag ink transfer method, which is a more rapid and cheap process than the Au metal transfer method because it does not require a vacuum equipment. The TIPS–pentacene TFTs with the self‐assembled monolayer (SAM) treated Ag ink electrode show better electrical properties compared to a device with evaporated Au electrodes.