An all optical mapping of the strain field in GaAsN/GaAsN:H wires

GaAsN/GaAsN:H heterostructures were made by an in-plane selective hydrogen incorporation controlled by H-opaque metallic masks. The strain field and hydrogen distributions in GaAsN micro-sized wires thus obtained have been mapped by an all optical procedure that combines micro-Raman scattering and p...

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Bibliographic Details
Published in:Applied physics letters 2012-11, Vol.101 (19)
Main Authors: Geddo, M., Giulotto, E., Grandi, M. S., Patrini, M., Trotta, R., Polimeni, A., Capizzi, M., Martelli, F., Rubini, S.
Format: Article
Language:English
Subjects:
Diffusion
Lattices
Patterning
Scattering
Spectroscopy
Strain
Wire
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Summary:GaAsN/GaAsN:H heterostructures were made by an in-plane selective hydrogen incorporation controlled by H-opaque metallic masks. The strain field and hydrogen distributions in GaAsN micro-sized wires thus obtained have been mapped by an all optical procedure that combines micro-Raman scattering and photoreflectance spectroscopy. The strain field is related to the formation of N-H complexes along the hydrogen diffusion profile with an ensuing expansion of the GaAsN lattice whose patterning generates an anisotropic stress in the sample growth plane. These results highlight a powerful non-invasive tool to simultaneously determine both the H diffusion profile and the related strain field distribution.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4766285