On the performance of low-noise low-DC-power-consumption cryogenic amplifiers

The performance of broad-band low-noise low-dc-power-consumption cryogenic amplifiers have been studied in detail with emphasis on minimizing the power consumption and optimizing the amplifier performance at cryogenic temperature. A general approach is presented for the modeling and amplifier design...

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Published in:IEEE transactions on microwave theory and techniques 2002-06, Vol.50 (6), p.1480-1486
Main Authors: Angelov, L., Wadefalk, N., Stenarson, J., Kollberg, E.L., Starski, P., Zirath, H.
Format: Article
Language:English
Subjects:
Amplifier design
Amplifiers
Cryogenics
Energy consumption
Gain
Gallium arsenide
Indium phosphide
Low-noise amplifiers
Microwave FETs
Microwave technology
Microwave transistors
Microwaves
Noise temperature
Optimization
Power consumption
Space technology
Transconductance
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cited_by cdi_FETCH-LOGICAL-c416t-e1cf8299ead657a26d6b7a8356ba3405a4f93d293959c63d195075867dc8fd2b3
cites cdi_FETCH-LOGICAL-c416t-e1cf8299ead657a26d6b7a8356ba3405a4f93d293959c63d195075867dc8fd2b3
container_end_page 1486
container_issue 6
container_start_page 1480
container_title IEEE transactions on microwave theory and techniques
container_volume 50
creator Angelov, L.
Wadefalk, N.
Stenarson, J.
Kollberg, E.L.
Starski, P.
Zirath, H.
description The performance of broad-band low-noise low-dc-power-consumption cryogenic amplifiers have been studied in detail with emphasis on minimizing the power consumption and optimizing the amplifier performance at cryogenic temperature. A general approach is presented for the modeling and amplifier design, which helps in minimizing the power consumption and optimizing the performance of the amplifier. A noise temperature below 9 K and 22-dB gain was experimentally obtained in the frequency range of 4-8 GHz with a total power consumption of 4 mW with commercial GaAs transistors.
doi_str_mv 10.1109/TMTT.2002.1006408
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fullrecord <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_miscellaneous_1671369690</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>1006408</ieee_id><sourcerecordid>2431363171</sourcerecordid><originalsourceid>FETCH-LOGICAL-c416t-e1cf8299ead657a26d6b7a8356ba3405a4f93d293959c63d195075867dc8fd2b3</originalsourceid><addsrcrecordid>eNqNkb1OwzAURi0EEqXwAIglYkAsLnYSO_aIyq9E1SXMluvcQKokDnaqqm-PQzogBmC6vvL57vAdhM4pmVFK5E2-yPNZTEg8o4TwlIgDNKGMZVjyjByiCSFUYJkKcoxOvF-HNWVETNBi2Ub9O0QduNK6RrcGIltGtd3i1lYevl53c9zZLThsbOs3TddXto2M29k3aCsT6aarq7IC50_RUalrD2f7OUWvD_f5_Am_LB-f57cv2KSU9xioKUUsJeiCs0zHvOCrTIuE8ZVOUsJ0WsqkiGUimTQ8KahkJGOCZ4URZRGvkim6Gu92zn5swPeqqbyButYt2I1XsZAhzMU_wDScFfJvMOOh5nQAr38FKc9owiWXJKCXP9C13bg2FKOECPUHSzxAdISMs947KFXnqka7naJEDWrVoFYNatVebchcjJkKAL7x4-8n2IieJQ</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>884504086</pqid></control><display><type>article</type><title>On the performance of low-noise low-DC-power-consumption cryogenic amplifiers</title><source>IEEE Electronic Library (IEL) Journals</source><creator>Angelov, L. ; Wadefalk, N. ; Stenarson, J. ; Kollberg, E.L. ; Starski, P. ; Zirath, H.</creator><creatorcontrib>Angelov, L. ; Wadefalk, N. ; Stenarson, J. ; Kollberg, E.L. ; Starski, P. ; Zirath, H.</creatorcontrib><description>The performance of broad-band low-noise low-dc-power-consumption cryogenic amplifiers have been studied in detail with emphasis on minimizing the power consumption and optimizing the amplifier performance at cryogenic temperature. A general approach is presented for the modeling and amplifier design, which helps in minimizing the power consumption and optimizing the performance of the amplifier. A noise temperature below 9 K and 22-dB gain was experimentally obtained in the frequency range of 4-8 GHz with a total power consumption of 4 mW with commercial GaAs transistors.</description><identifier>ISSN: 0018-9480</identifier><identifier>EISSN: 1557-9670</identifier><identifier>DOI: 10.1109/TMTT.2002.1006408</identifier><identifier>CODEN: IETMAB</identifier><language>eng</language><publisher>New York: IEEE</publisher><subject>Amplifier design ; Amplifiers ; Cryogenics ; Energy consumption ; Gain ; Gallium arsenide ; Indium phosphide ; Low-noise amplifiers ; Microwave FETs ; Microwave technology ; Microwave transistors ; Microwaves ; Noise temperature ; Optimization ; Power consumption ; Space technology ; Transconductance</subject><ispartof>IEEE transactions on microwave theory and techniques, 2002-06, Vol.50 (6), p.1480-1486</ispartof><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2002</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c416t-e1cf8299ead657a26d6b7a8356ba3405a4f93d293959c63d195075867dc8fd2b3</citedby><cites>FETCH-LOGICAL-c416t-e1cf8299ead657a26d6b7a8356ba3405a4f93d293959c63d195075867dc8fd2b3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/1006408$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,780,784,27924,27925,54796</link.rule.ids></links><search><creatorcontrib>Angelov, L.</creatorcontrib><creatorcontrib>Wadefalk, N.</creatorcontrib><creatorcontrib>Stenarson, J.</creatorcontrib><creatorcontrib>Kollberg, E.L.</creatorcontrib><creatorcontrib>Starski, P.</creatorcontrib><creatorcontrib>Zirath, H.</creatorcontrib><title>On the performance of low-noise low-DC-power-consumption cryogenic amplifiers</title><title>IEEE transactions on microwave theory and techniques</title><addtitle>TMTT</addtitle><description>The performance of broad-band low-noise low-dc-power-consumption cryogenic amplifiers have been studied in detail with emphasis on minimizing the power consumption and optimizing the amplifier performance at cryogenic temperature. A general approach is presented for the modeling and amplifier design, which helps in minimizing the power consumption and optimizing the performance of the amplifier. A noise temperature below 9 K and 22-dB gain was experimentally obtained in the frequency range of 4-8 GHz with a total power consumption of 4 mW with commercial GaAs transistors.</description><subject>Amplifier design</subject><subject>Amplifiers</subject><subject>Cryogenics</subject><subject>Energy consumption</subject><subject>Gain</subject><subject>Gallium arsenide</subject><subject>Indium phosphide</subject><subject>Low-noise amplifiers</subject><subject>Microwave FETs</subject><subject>Microwave technology</subject><subject>Microwave transistors</subject><subject>Microwaves</subject><subject>Noise temperature</subject><subject>Optimization</subject><subject>Power consumption</subject><subject>Space technology</subject><subject>Transconductance</subject><issn>0018-9480</issn><issn>1557-9670</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2002</creationdate><recordtype>article</recordtype><recordid>eNqNkb1OwzAURi0EEqXwAIglYkAsLnYSO_aIyq9E1SXMluvcQKokDnaqqm-PQzogBmC6vvL57vAdhM4pmVFK5E2-yPNZTEg8o4TwlIgDNKGMZVjyjByiCSFUYJkKcoxOvF-HNWVETNBi2Ub9O0QduNK6RrcGIltGtd3i1lYevl53c9zZLThsbOs3TddXto2M29k3aCsT6aarq7IC50_RUalrD2f7OUWvD_f5_Am_LB-f57cv2KSU9xioKUUsJeiCs0zHvOCrTIuE8ZVOUsJ0WsqkiGUimTQ8KahkJGOCZ4URZRGvkim6Gu92zn5swPeqqbyButYt2I1XsZAhzMU_wDScFfJvMOOh5nQAr38FKc9owiWXJKCXP9C13bg2FKOECPUHSzxAdISMs947KFXnqka7naJEDWrVoFYNatVebchcjJkKAL7x4-8n2IieJQ</recordid><startdate>20020601</startdate><enddate>20020601</enddate><creator>Angelov, L.</creator><creator>Wadefalk, N.</creator><creator>Stenarson, J.</creator><creator>Kollberg, E.L.</creator><creator>Starski, P.</creator><creator>Zirath, H.</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>RIA</scope><scope>RIE</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope><scope>F28</scope><scope>FR3</scope><scope>H8D</scope><scope>7U5</scope></search><sort><creationdate>20020601</creationdate><title>On the performance of low-noise low-DC-power-consumption cryogenic amplifiers</title><author>Angelov, L. ; Wadefalk, N. ; Stenarson, J. ; Kollberg, E.L. ; Starski, P. ; Zirath, H.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c416t-e1cf8299ead657a26d6b7a8356ba3405a4f93d293959c63d195075867dc8fd2b3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2002</creationdate><topic>Amplifier design</topic><topic>Amplifiers</topic><topic>Cryogenics</topic><topic>Energy consumption</topic><topic>Gain</topic><topic>Gallium arsenide</topic><topic>Indium phosphide</topic><topic>Low-noise amplifiers</topic><topic>Microwave FETs</topic><topic>Microwave technology</topic><topic>Microwave transistors</topic><topic>Microwaves</topic><topic>Noise temperature</topic><topic>Optimization</topic><topic>Power consumption</topic><topic>Space technology</topic><topic>Transconductance</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Angelov, L.</creatorcontrib><creatorcontrib>Wadefalk, N.</creatorcontrib><creatorcontrib>Stenarson, J.</creatorcontrib><creatorcontrib>Kollberg, E.L.</creatorcontrib><creatorcontrib>Starski, P.</creatorcontrib><creatorcontrib>Zirath, H.</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 1998–Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>CrossRef</collection><collection>Electronics &amp; Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>ANTE: Abstracts in New Technology &amp; Engineering</collection><collection>Engineering Research Database</collection><collection>Aerospace Database</collection><collection>Solid State and Superconductivity Abstracts</collection><jtitle>IEEE transactions on microwave theory and techniques</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Angelov, L.</au><au>Wadefalk, N.</au><au>Stenarson, J.</au><au>Kollberg, E.L.</au><au>Starski, P.</au><au>Zirath, H.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>On the performance of low-noise low-DC-power-consumption cryogenic amplifiers</atitle><jtitle>IEEE transactions on microwave theory and techniques</jtitle><stitle>TMTT</stitle><date>2002-06-01</date><risdate>2002</risdate><volume>50</volume><issue>6</issue><spage>1480</spage><epage>1486</epage><pages>1480-1486</pages><issn>0018-9480</issn><eissn>1557-9670</eissn><coden>IETMAB</coden><abstract>The performance of broad-band low-noise low-dc-power-consumption cryogenic amplifiers have been studied in detail with emphasis on minimizing the power consumption and optimizing the amplifier performance at cryogenic temperature. A general approach is presented for the modeling and amplifier design, which helps in minimizing the power consumption and optimizing the performance of the amplifier. A noise temperature below 9 K and 22-dB gain was experimentally obtained in the frequency range of 4-8 GHz with a total power consumption of 4 mW with commercial GaAs transistors.</abstract><cop>New York</cop><pub>IEEE</pub><doi>10.1109/TMTT.2002.1006408</doi><tpages>7</tpages></addata></record>
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issn 0018-9480
1557-9670
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recordid cdi_proquest_miscellaneous_1671369690
source IEEE Electronic Library (IEL) Journals
subjects Amplifier design
Amplifiers
Cryogenics
Energy consumption
Gain
Gallium arsenide
Indium phosphide
Low-noise amplifiers
Microwave FETs
Microwave technology
Microwave transistors
Microwaves
Noise temperature
Optimization
Power consumption
Space technology
Transconductance
title On the performance of low-noise low-DC-power-consumption cryogenic amplifiers
url http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-03T11%3A41%3A30IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=On%20the%20performance%20of%20low-noise%20low-DC-power-consumption%20cryogenic%20amplifiers&rft.jtitle=IEEE%20transactions%20on%20microwave%20theory%20and%20techniques&rft.au=Angelov,%20L.&rft.date=2002-06-01&rft.volume=50&rft.issue=6&rft.spage=1480&rft.epage=1486&rft.pages=1480-1486&rft.issn=0018-9480&rft.eissn=1557-9670&rft.coden=IETMAB&rft_id=info:doi/10.1109/TMTT.2002.1006408&rft_dat=%3Cproquest_cross%3E2431363171%3C/proquest_cross%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-c416t-e1cf8299ead657a26d6b7a8356ba3405a4f93d293959c63d195075867dc8fd2b3%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_pqid=884504086&rft_id=info:pmid/&rft_ieee_id=1006408&rfr_iscdi=true