Fano resonance in Raman scattering of graphene

Fano resonances and their strong doping dependence are observed in Raman scattering of single-layer graphene (SLG). As the Fermi level is varied by a back-gate bias, the Raman G band of SLG exhibits an asymmetric line shape near the charge neutrality point as a manifestation of a Fano resonance, whe...

Full description

Saved in:
Bibliographic Details
Published in:Carbon (New York) 2013-09, Vol.61, p.373-378
Main Authors: Yoon, Duhee, Jeong, Dongchan, Lee, Hu-Jong, Saito, Riichiro, Son, Young-Woo, Lee, Hyun Cheol, Cheong, Hyeonsik
Format: Article
Language:English
Subjects:
Asymmetry
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Doping
Electron states
Exact sciences and technology
Excitation spectra
Excitons and related phenomena
Fermi surfaces
Graphene
Line shape
Physics
Raman scattering
Spectra
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Fano resonances and their strong doping dependence are observed in Raman scattering of single-layer graphene (SLG). As the Fermi level is varied by a back-gate bias, the Raman G band of SLG exhibits an asymmetric line shape near the charge neutrality point as a manifestation of a Fano resonance, whereas the line shape is symmetric when the graphene sample is electron or hole doped. However, the G band of bilayer graphene (BLG) does not exhibit any Fano resonance regardless of doping. The observed Fano resonance can be interpreted as interferences between the phonon and excitonic many-body spectra in SLG. The absence of a Fano resonance in the Raman G band of BLG can be explained in the same framework since excitonic interactions are not expected in BLG.
ISSN:0008-6223
1873-3891
DOI:10.1016/j.carbon.2013.05.019