Comparative study of chemically synthesized and exfoliated multilayer MoS2 field-effect transistors

We report the realization of field-effect transistors (FETs) made with chemically synthesized multilayer 2D crystal semiconductor MoS2. Electrical properties such as the FET mobility, subthreshold swing, on/off ratio, and contact resistance of chemically synthesized (s-) MoS2 are indistinguishable f...

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Bibliographic Details
Published in:Applied physics letters 2013-01, Vol.102 (4)
Main Authors: Sik Hwang, Wan, Remskar, Maja, Yan, Rusen, Kosel, Tom, Kyung Park, Jong, Jin Cho, Byung, Haensch, Wilfried, (Grace) Xing, Huili, Seabaugh, Alan, Jena, Debdeep
Format: Article
Language:English
Subjects:
Crystals
Exfoliation
Molybdenum disulfide
Multilayers
Semiconductor devices
Semiconductors
Transistors
Two dimensional
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Summary:We report the realization of field-effect transistors (FETs) made with chemically synthesized multilayer 2D crystal semiconductor MoS2. Electrical properties such as the FET mobility, subthreshold swing, on/off ratio, and contact resistance of chemically synthesized (s-) MoS2 are indistinguishable from that of mechanically exfoliated (x-) MoS2, however, flat-band voltages are different, possibly due to polar chemical residues originating in the transfer process. Electron diffraction studies and Raman spectroscopy show the structural similarity of s-MoS2 to x-MoS2. This initial report on the behavior and properties of s-MoS2 illustrates the feasibility of electronic devices using synthetic layered 2D crystal semiconductors.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4789975