Capture/Emission Processes of Carriers in Heterointerface Traps Observed in the Transient Charge-Pumping Characteristics of SiGe/Si-Hetero-Channel pMOSFETs

Transient phenomena related to carrier capture/emission processes in interface traps were observed in the the charge pumping (CP) characteristics of SiGe/Si hetero-channel pMOSFETs, i.e., the CP characteristics were found to depend on the on/off time of the gate pulse. From these observations, time...

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Bibliographic Details
Published in:Key engineering materials 2011-01, Vol.470, p.201-206
Main Authors: Sakuraba, Masao, Murota, Junichi, Yoshida, Keiichi, Tsuchiya, Toshiaki
Format: Article
Language:English
Subjects:
Carriers
Current carriers
Emission
Energy gap
Energy levels
Silicon
Silicon germanides
Time constant
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Summary:Transient phenomena related to carrier capture/emission processes in interface traps were observed in the the charge pumping (CP) characteristics of SiGe/Si hetero-channel pMOSFETs, i.e., the CP characteristics were found to depend on the on/off time of the gate pulse. From these observations, time constants for the processes both in SiGe/Si heterointerface traps and in gate-oxide interface traps were derived. The time constant is considered to depend on the energy level of the interface traps that are present over a wide range within the energy gap. Therefore, these phenomena provide an interesting way of evaluating the discrete energy levels of interface traps in nanometer-scale devices containing only a few traps.
ISSN:1013-9826
1662-9795
1662-9795
DOI:10.4028/www.scientific.net/KEM.470.201