Thermodynamic modeling of bulk ternary alloy crystal growth: Comparison of experiments and theory for GaInSb alloys

• Published in: Journal of crystal growth 2011-12, Vol.337 (1), p.60-64
• Main Authors: Goza, Andres J., Tritchler, Stephanie E., Bliss, David F., Houchens, Brent C.
• Format: Article
• Language: English
• Subjects: A1. Growth models; A1. Segregation; A2. Growth from melt; Alloys; B1. Antimonides; B2. Semiconducting ternary compounds; Bridgman method; Condensed matter: structure, mechanical and thermal properties; Cross-disciplinary physics: materials science; rheology; Crystal growth; Crystals; Equations of state, phase equilibria, and phase transitions; Exact sciences and technology; Gallium base alloys; Growth from melts; zone melting and refining; Materials science; Mathematical models; Melts; Methods of crystal growth; physics of crystal growth; Physics; Solubility, segregation, and mixing; phase separation; Ternary alloys
• ISSN: 0022-0248; 1873-5002
• DOI: 10.1016/j.jcrysgro.2011.09.056

Ternary alloy GaInSb crystals are grown from a melt in the horizontal Bridgman configuration for high (70%) and low (30%) Ga compositions. Each composition is compared to ideal and regular solution model predictions. Good agreement is found between the regular solution model and experimental observations. However, this agreement is quite sensitive to the starting proportions of the constituent elements. ► GaInSb is grown by horizontal Bridgman at approximately 30, 50 and 70 atomic percent gallium. ► Axial segregation based on electron microprobe analysis is presented. ► Regular solution model predictions are compared to experiments. ► The regular solution model confirms the melt remained well-mixed during growth. ► Regular solution model predictions are sensitive to the proportions in the melt.