Experimental analysis and modeling of buried waveguides fabricated by quantum-well intermixing

The fabrication of buried waveguides in InP-based quantum-well (QW) material through the use of implantation. Enhanced QW band edge blue-shifting is reported. First, the lateral selectivity of implantation-induced QW intermixing is investigated using a specially designed implantation mask and photol...

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Bibliographic Details
Published in:IEEE journal of quantum electronics 1999-09, Vol.35 (9), p.1354-1363
Main Authors: Haysom, J.E., Delage, A., He, J.-J., Koteles, E.S., Poole, P.J., Feng, Y., Goldberg, R.D., Mitchell, I.V., Charbonneau, S.
Format: Article
Language:English
Subjects:
Applied sciences
Beams (radiation)
Circuit properties
Electric, optical and optoelectronic circuits
Electronics
Exact sciences and technology
Fundamental areas of phenomenology (including applications)
Implantation
Integrated optics. Optical fibers and wave guides
Laser beams
Laser excitation
Laser modes
Lasers
Materials selection
Optical and optoelectronic circuits
Optical device fabrication
Optical materials
Optical waveguides and couplers
Optics
Photoluminescence
Physics
Quantum electronics
Quantum wells
Refractive index
Semiconductor lasers
laser diodes
Waveguide components
Waveguide lasers
Waveguides
Wavelengths
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Summary:The fabrication of buried waveguides in InP-based quantum-well (QW) material through the use of implantation. Enhanced QW band edge blue-shifting is reported. First, the lateral selectivity of implantation-induced QW intermixing is investigated using a specially designed implantation mask and photoluminescence. The refractive index change of the intermixed material is measured near the band edge. In combination, the lateral resolution and the index difference have allowed for the fabrication of narrow buried waveguides in an InP-based laser structure. Detailed modeling of the mode excitation and beam propagation of these devices is performed, and results are compared with experimental near-field profiles. We demonstrate that the waveguides are single-mode for both TE and TM polarizations at wavelengths near the band edge. The potential applications of this waveguide structure include post-growth fabrication of buried waveguide lasers and other integrated components.
ISSN:0018-9197
1558-1713
DOI:10.1109/3.784598