Control of droplet morphology for inkjet-printed TIPS-pentacene transistors

• Published in: Microelectronic engineering 2012-07, Vol.95, p.1-4
• Main Authors: Lee, Myung Won, Ryu, Gi Seong, Lee, Young Uk, Pearson, Christopher, Petty, Michael C., Song, Chung Kun
• Format: Article
• Language: English
• Subjects: Applied sciences; Condensed matter: structure, mechanical and thermal properties; Drains; Droplets; Electrodes; Electronics; Exact sciences and technology; Grain boundaries; Grain size; Inkjet printing; Low-dimensional structures (superlattices, quantum well structures, multilayers): structure, and nonelectronic properties; Molecular electronics, nanoelectronics; Morphology; Organic field effect transistor; Physics; Semiconductor devices; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties); Thermal process; TIPS-pentacene; Transistors
• ISSN: 0167-9317; 1873-5568
• DOI: 10.1016/j.mee.2012.01.006

[Display omitted] ► The methods to control the morphology of TIPS-PEN are proposed. ► The morphology of TIPS-PEN depends on the temperature of droplets during drying. ► The optimum temperature was extracted to be 46°C in air. ► The position of droplets relative to the channel affects the performance of OTFTs. ► The grain boundary parallel to the current flow exhibits the highest mobility. We report on methods to control the morphology of droplets of 6,13-bis(triisopropyl-silylethynyl) pentacene (TIPS-PEN), which are then used in the fabrication of organic thin film transistors (OTFTs). The grain size and distribution of the TIPS-PEN were found to depend on the temperature of the droplets during drying. The performance of the OTFTs could be improved by heating the substrate and also by changing the relative positions of the inkjet-printed droplets. In our experiments, the optimum substrate temperature was 46°C in air. Transistors with the TIPS-PEN grain boundaries parallel to the current flow between the source and drain electrodes exhibited charge carrier mobilities of 0.44±0.08cm2/Vs.