Accurate determination of thermal resistance of FETs

The accurate determination of the channel temperature in field-effect transistors (FETs) and monolithic microwave integrated circuits is critical for reliability. An original accurate closed-form expression is presented for the thermal resistance of multifinger FET structures. The model is based on...

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Bibliographic Details
Published in:IEEE transactions on microwave theory and techniques 2005-01, Vol.53 (1), p.306-313
Main Authors: Darwish, A.M., Bayba, A.J., Hung, H.A.
Format: Article
Language:English
Subjects:
Applied sciences
Channels
Closed-form solution
Electrical resistance measurement
Electronics
Exact sciences and technology
Exact solutions
Field-effect transistors (FETs)
Heat transfer
Integrated circuit reliability
Laplace equation
Mathematical analysis
Mathematical models
Microwave FET integrated circuits
Microwave FETs
Microwave integrated circuits
Microwaves
MMICs
Monolithic integrated circuits
power FETs
reliability
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Temperature
thermal effects
Thermal resistance
Transistors
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Description
Summary:The accurate determination of the channel temperature in field-effect transistors (FETs) and monolithic microwave integrated circuits is critical for reliability. An original accurate closed-form expression is presented for the thermal resistance of multifinger FET structures. The model is based on the solution of Laplace's equations in prolate spheroidal coordinates and elliptical cylinder coordinates. The model's validity is verified by comparing the results with finite-element simulations, and experimental observations from liquid-crystal measurements and spatially resolved photoluminescence measurements. Very close agreement is observed in all cases.
ISSN:0018-9480
1557-9670
DOI:10.1109/TMTT.2004.839916