Organic and Inorganic Blocking Layers for Solution-Processed Colloidal PbSe Nanocrystal Infrared Photodetectors

A PbSe solution‐processed nanocrystal‐based infrared photodetector incorporating carrier blocking layers is demonstrated, and significant reduction of dark current is achieved. Detectivity values close to 1012 Jones are achieved by using poly[(9,9′‐dioctylfluorenyl‐2,7‐diyl)‐co‐(4,4′‐(N‐(4‐sec‐butyl...

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Bibliographic Details
Published in:Advanced functional materials 2011-01, Vol.21 (1), p.167-171
Main Authors: Sarasqueta, Galileo, Choudhury, Kaushik Roy, Subbiah, Jegadesan, So, Franky
Format: Article
Language:English
Subjects:
Blocking
Current carriers
Dark current
Devices
Infrared
lead
nanocrystal
Nanocrystals
photodetector
Photodetectors
Zinc oxide
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Summary:A PbSe solution‐processed nanocrystal‐based infrared photodetector incorporating carrier blocking layers is demonstrated, and significant reduction of dark current is achieved. Detectivity values close to 1012 Jones are achieved by using poly[(9,9′‐dioctylfluorenyl‐2,7‐diyl)‐co‐(4,4′‐(N‐(4‐sec‐butyl))diphenylamine)] (TFB) and ZnO nanocrystals (NC) as the electron blocker and hole blocker, respectively. An improvement in lifetime is also observed in the devices with the ZnO NCs hole blocking layer. A PbSe solution‐processed nanocrystal‐based infrared photodetector incorporating carrier blocking layers is demonstrated, and significant reduction of dark current is achieved. Good photodetector performance is achieved by reducing dark currents through selection and incorporation of organic and inorganic nanocrystal wide‐bandgap materials with proper LUMO and HOMO levels to block electrons and holes under reversed bias.
ISSN:1616-301X
1616-3028
1616-3028
DOI:10.1002/adfm.201001328