Pressure response to electronic structures of bulk semiconductors at room temperature

We studied the effect of hydrostatic pressure (at room temperature) on the electronic band structures for Si, GaAs, and AlAs bulk semiconductors. Our calculations were based on the local empirical pseudopotential formalism. Also, the dependence of the energy gaps for Si, GaAs and AlAs semiconductors...

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Bibliographic Details
Published in:Physica. B, Condensed matter Condensed matter, 2010-09, Vol.405 (17), p.3709-3713
Main Authors: Elabsy, A.M., Degheidy, A.R., Abdelwahed, H.G., Elkenany, E.B.
Format: Article
Language:English
Subjects:
Bulk semiconductors
Condensed matter
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Electron density of states and band structure of crystalline solids
Electron states
Electronic structures
Electronics
Elemental semiconductors
Energy gaps (solid state)
Exact sciences and technology
Gallium arsenide
Gallium arsenides
Hydrostatic pressure
Mathematical analysis
Physics
Pressure
Room temperature
Semiconductor compounds
Semiconductors
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Summary:We studied the effect of hydrostatic pressure (at room temperature) on the electronic band structures for Si, GaAs, and AlAs bulk semiconductors. Our calculations were based on the local empirical pseudopotential formalism. Also, the dependence of the energy gaps for Si, GaAs and AlAs semiconductors on the hydrostatic pressure were calculated. We found that the most values of the electronic energy bands were more sensitive to the pressure dependent form factor associated with the reciprocal lattice vectors of | Δ G → | 2 = 11 than any other value. Our results for band gaps are found to be in good agreement with the available experimental data.
ISSN:0921-4526
1873-2135
DOI:10.1016/j.physb.2010.05.071