High-Temperature Stable HfLaON p-MOSFETs With High-Work-Function Ir sub(3)Si Gate

We report a novel 1000 degC stable HfLaON p-MOSFET with Ir sub(3 )Si gate. Low leakage current of 1.8times10 super(-5) A/cm super(2) at 1 V above flat-band voltage, good effective work function of 5.08 eV, and high mobility of 84 cm super(2)/Vmiddots are simultaneously obtained at 1.6 nm equivalent...

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Bibliographic Details
Published in:IEEE electron device letters 2007-01, Vol.28 (4)
Main Authors: Wu, CH, Hung, B F, Chin, A, Wang, S J, Wang, X P, Li, M-F, Zhu, C, Yen, F Y, Hou, Y T, Jin, Y, Tao, HJ, Chen, S C, Liang, MS
Format: Article
Language:English
Subjects:
Electric potential
Equivalence
Gates
Implants
Leakage current
Oxides
Voltage
Work functions
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Summary:We report a novel 1000 degC stable HfLaON p-MOSFET with Ir sub(3 )Si gate. Low leakage current of 1.8times10 super(-5) A/cm super(2) at 1 V above flat-band voltage, good effective work function of 5.08 eV, and high mobility of 84 cm super(2)/Vmiddots are simultaneously obtained at 1.6 nm equivalent oxide thickness. This gate-first p-MOSFET process with self-aligned ion implant and 1000 degC rapid thermal annealing is fully compatible to current very large scale integration fabrication lines
ISSN:0741-3106
DOI:10.1109/LED.2007.892367