High-Temperature Stable HfLaON p-MOSFETs With High-Work-Function Ir sub(3)Si Gate

We report a novel 1000 degC stable HfLaON p-MOSFET with Ir sub(3 )Si gate. Low leakage current of 1.8times10 super(-5) A/cm super(2) at 1 V above flat-band voltage, good effective work function of 5.08 eV, and high mobility of 84 cm super(2)/Vmiddots are simultaneously obtained at 1.6 nm equivalent...

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Published in:IEEE electron device letters 2007-01, Vol.28 (4)
Main Authors: Wu, CH, Hung, B F, Chin, A, Wang, S J, Wang, X P, Li, M-F, Zhu, C, Yen, F Y, Hou, Y T, Jin, Y, Tao, HJ, Chen, S C, Liang, MS
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Language:English
Subjects:
Electric potential
Equivalence
Gates
Implants
Leakage current
Oxides
Voltage
Work functions
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container_title IEEE electron device letters
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creator Wu, CH
Hung, B F
Chin, A
Wang, S J
Wang, X P
Li, M-F
Zhu, C
Yen, F Y
Hou, Y T
Jin, Y
Tao, HJ
Chen, S C
Liang, MS
description We report a novel 1000 degC stable HfLaON p-MOSFET with Ir sub(3 )Si gate. Low leakage current of 1.8times10 super(-5) A/cm super(2) at 1 V above flat-band voltage, good effective work function of 5.08 eV, and high mobility of 84 cm super(2)/Vmiddots are simultaneously obtained at 1.6 nm equivalent oxide thickness. This gate-first p-MOSFET process with self-aligned ion implant and 1000 degC rapid thermal annealing is fully compatible to current very large scale integration fabrication lines
doi_str_mv 10.1109/LED.2007.892367
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subjects Electric potential
Equivalence
Gates
Implants
Leakage current
Oxides
Voltage
Work functions
title High-Temperature Stable HfLaON p-MOSFETs With High-Work-Function Ir sub(3)Si Gate
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