Characterization of group II hafnates and zirconates for metal-insulator-metal capacitors

Thin layers of SrHfO3, BaHfO3 and BaZrO3 are deposited onto TiN substrates and investigated in view of memory capacitor applications. The as deposited layers are amorphous and show dielectric constants of about 20. Rapid thermal annealing induces crystallization in the cubic perovskite phase and res...

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Bibliographic Details
Published in:Physica Status Solidi (b) 2011-02, Vol.248 (2), p.323-326
Main Authors: Lupina, Grzegorz, Seifarth, Olaf, Dudek, Piotr, Kozlowski, Grzegorz, Dabrowski, Jarek, Thieme, Hans-Jürgen, Lippert, Gunther, Schroeder, Thomas, Müssig, Hans-Joachim
Format: Article
Language:English
Subjects:
Band spectra
Barium zirconates
Capacitors
Deposition
Dielectric constant
dielectric thin films
Electronics
Hafnium oxide
high-k capacitors
Thin films
X-ray absorption spectroscopy
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Summary:Thin layers of SrHfO3, BaHfO3 and BaZrO3 are deposited onto TiN substrates and investigated in view of memory capacitor applications. The as deposited layers are amorphous and show dielectric constants of about 20. Rapid thermal annealing induces crystallization in the cubic perovskite phase and results in an increase of the dielectric constant up to 45. A combination of X‐ray absorption spectroscopy (XAS) and photoemission spectroscopy measurements reports high electronic band gap values comparable with that of reference HfO2 layers.
ISSN:0370-1972
1521-3951
1521-3951
DOI:10.1002/pssb.201046456