Analytic model of thermal runaway in silicon detectors

Usually the thermal behavior of silicon detectors is predicted from numerical methods (FEA or finite difference methods). However, these results are specific to the modelled structure and the input parameter set. Here we pursue the complementary, analytic, approach which offers some general (if appr...

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Bibliographic Details
Published in:Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment Accelerators, spectrometers, detectors and associated equipment, 2010-06, Vol.618 (1), p.131-138
Main Authors: Beck, Graham, Viehhauser, Georg
Format: Article
Language:English
Subjects:
Approximation
Cooling
Detectors
Heat transfer
Mathematical analysis
Mathematical models
Sensors
Silicon
Silicon detector
Thermal management
Thermal resistance
Thermal runaway
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Summary:Usually the thermal behavior of silicon detectors is predicted from numerical methods (FEA or finite difference methods). However, these results are specific to the modelled structure and the input parameter set. Here we pursue the complementary, analytic, approach which offers some general (if approximate) results that allow relatively simple extrapolation of the performance of a specific detector design. We present simple network models to calculate analytically the limit of thermal stability in silicon detectors. In particular we use a minimal model, which ignores the thermal resistance within the sensor in comparison with the off-detector resistance. We further discuss an extension of this model to study the effects of a finite sensor thermal resistance.
ISSN:0168-9002
1872-9576
DOI:10.1016/j.nima.2010.02.264