The impact of TiN capping Layer on NiSi, CoSi sub(2), and Co sub(x)Ni sub(1-x)Si sub( 2) FUSI metal gate work function adjustment

The impact of TiN capping layer on dual work functions of Ni, Co, and Co-Ni fully silicided (FUSI) metal gates was investigated. It was found that the TiN capping layer significantly altered the distribution of both n- and p-dopants during the FUSI process, which in turn changed the work functions o...

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Published in:IEEE transactions on electron devices 2005-01, Vol.52 (12)
Main Authors: Liu, Jun, Wen, Huang-Chun, Lu, Jiong-Ping, Kwong, Dim-Lee
Format: Article
Language:English
Subjects:
Capping
CMOS
Devices
Gates
Silicides
Tin
Tuning
Work functions
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Lu, Jiong-Ping
Kwong, Dim-Lee
description The impact of TiN capping layer on dual work functions of Ni, Co, and Co-Ni fully silicided (FUSI) metal gates was investigated. It was found that the TiN capping layer significantly altered the distribution of both n- and p-dopants during the FUSI process, which in turn changed the work functions of both As-doped and B-doped in the three FUSI metal gate systems. The work function tuning was found to have a linear relationship with the change of dopant level at the silicides/dielectric interface after adding TiN capping layer. The investigation of TiN capping layer on FUSI provided some insights on work function tuning mechanism in FUSI systems. This work also suggested a new methodology for optimizing the nMOS and pMOS work functions for CMOS device applications.
doi_str_mv 10.1109/TED.2005.859700
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subjects Capping
CMOS
Devices
Gates
Silicides
Tin
Tuning
Work functions
title The impact of TiN capping Layer on NiSi, CoSi sub(2), and Co sub(x)Ni sub(1-x)Si sub( 2) FUSI metal gate work function adjustment
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