Fabrication and characterization of In2O3 nanowires

In2O3 nanowires were successfully fabricated through a simple gas-reaction route in argon atmosphere. These nanowires have diameters ranging from 20 nm to 50 nm and lengths up to tens of micrometers. High-resolution transmission electron microscopy observations and the electron-diffraction (ED) patt...

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Bibliographic Details
Published in:Applied physics. A, Materials science & processing Materials science & processing, 2002-12, Vol.75 (6), p.687-689
Main Authors: DAI, L, CHEN, X. L, JIAN, J. K, HE, M, ZHOU, T, HU, B. Q
Format: Article
Language:English
Subjects:
Argon
Cross-disciplinary physics: materials science
rheology
Emission
Exact sciences and technology
Indium oxides
Materials science
Micrometers
Nanoscale materials and structures: fabrication and characterization
Nanowires
Physics
Planes
Stacking
Wire
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Summary:In2O3 nanowires were successfully fabricated through a simple gas-reaction route in argon atmosphere. These nanowires have diameters ranging from 20 nm to 50 nm and lengths up to tens of micrometers. High-resolution transmission electron microscopy observations and the electron-diffraction (ED) pattern reveal that the In2O3 nanowires are formed by the stacking of (2) planes along the [1] direction, which is parallel to the wire axis. A strong and wide ultraviolet (UV) emission band centered at around 392 nm is observed for the first time in the room-temperature photoluminescence measurement in addition to the usual blue emission (468 nm). Moreover, five discrete fine peaks (372 nm, 383 nm, 406 nm, 392 nm and 413 nm) are further identified in this broad UV band.
ISSN:0947-8396
1432-0630
DOI:10.1007/s00339-002-1475-8