Electron Mobility in Silicon Nanowires

The low-field electron mobility in rectangular silicon nanowire (SiNW) transistors was computed using a self-consistent Poisson-Schroumldinger-Monte Carlo solver. The behavior of the phonon-limited and surface-roughness-limited components of the mobility was investigated by decreasing the wire width...

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Bibliographic Details
Published in:IEEE transactions on nanotechnology 2007-01, Vol.6 (1), p.113-117
Main Authors: Ramayya, E.B., Vasileska, D., Goodnick, S.M., Knezevic, I.
Format: Article
Language:English
Subjects:
Acoustic scattering
Applied sciences
Crossovers
Electron mobility
Electronics
Exact sciences and technology
Inversions
MOSFETs
Nanotechnology
Nanowires
Optical scattering
Phonons
Rough surfaces
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Silicon
silicon nanowires
Surface roughness
Transistors
Wavefunctions
Wire
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Summary:The low-field electron mobility in rectangular silicon nanowire (SiNW) transistors was computed using a self-consistent Poisson-Schroumldinger-Monte Carlo solver. The behavior of the phonon-limited and surface-roughness-limited components of the mobility was investigated by decreasing the wire width from 30 to 8 nm, the width range capturing a crossover between two-dimensional and one-dimensional electron transport. The phonon-limited mobility, which characterizes transport at low and moderate transverse fields, is found to decrease with decreasing wire width due to an increase in the electron-phonon wavefunction overlap. In contrast, the mobility at very high transverse fields, which is limited by surface roughness scattering, increases with decreasing wire width due to volume inversion. The importance of acoustic phonon confinement is also discussed briefly
ISSN:1536-125X
1941-0085
DOI:10.1109/TNANO.2006.888521