Fabrication and electrical characteristics of Perylene-3,4,9,10-tetracarboxylic dianhydride/p-GaAs diode structure

• Published in: Microelectronics and reliability 2012-07, Vol.52 (7), p.1355-1361
• Main Authors: Soylu, Murat, Yakuphanoglu, Fahrettin, Yahia, I.S.
• Format: Article
• Language: English
• Subjects: Applied sciences; Barriers; Dianhydrides; Diodes; Electronics; Exact sciences and technology; Gallium arsenide; Gallium arsenides; Interlayers; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Semiconductors; Silver
• ISSN: 0026-2714; 1872-941X
• DOI: 10.1016/j.microrel.2012.02.013

[Display omitted] ► The OI-HJ structures behave like a Schottky contact. ► The PTCDA modified the diode parameters by influencing the space charge region. ► The charge transport depends on the space charge region and the interfacial state density. This study aims to experimentally investigate whether Perylene-3,4,9,10-tetracarboxylic dianhydride (PTCDA) organic layer at p-GaAs/Ag interface affects electrical transport across this interface or not. The electronic properties of metal–organic semiconductor–inorganic semiconductor structure between p type GaAs and PTCDA organic film have been investigated via current–voltage (I–V) and capacitance–voltage (C–V) methods. The Ag/PTCDA/p-GaAs contact exhibits a rectification behavior with the barrier height of 0.74eV and ideality factor value of 3.42. Modification of the potential barrier of Ag/p-GaAs diode was achieved by using thin interlayer of the PTCDA organic material. This was attributed to the fact that the PTCDA organic interlayer increased the effective barrier height by influencing the space charge region of GaAs. The low and high frequency capacitance–voltage plots were used to determine the interface state density of the diode.