Engineering laser gain spectrum using electronic vertically coupled InAs-GaAs quantum dots

Continuous large-broad laser gain spectra near 1.3 μm are obtained using an active region of electronic vertically coupled (EVC) InAs-GaAs quantum dots (QDs). A wide continuous electroluminescence spectrum, unlike that from conventional uncoupled InAs QD lasers, was obtained around 230 nm (below thr...

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Bibliographic Details
Published in:IEEE photonics technology letters 2005-08, Vol.17 (8), p.1590-1592
Main Authors: Jyh-Shyang Wang, Ru-Shang Hsiao, Jenn-Fang Chen, Chu-Shou Yang, Lin, G., Chiu-Yueh Liang, Chih-Ming Lai, Hui-Yu Liu, Tung-Wei Chi, Chi, J.-Y.
Format: Article
Language:English
Subjects:
Density
Electronic vertically coupled quantum dots (EVCQDs)
Electronics
Gain
InAs quantum dots (QDs)
Laser modes
Laser tuning
Lasers
Lasing
Optical coupling
Quantum dot lasers
Quantum dots
Semiconductor lasers
Spectra
Stimulated emission
Surface emitting lasers
Threshold current
Threshold currents
US Department of Transportation
Vertical cavity surface emitting lasers
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Summary:Continuous large-broad laser gain spectra near 1.3 μm are obtained using an active region of electronic vertically coupled (EVC) InAs-GaAs quantum dots (QDs). A wide continuous electroluminescence spectrum, unlike that from conventional uncoupled InAs QD lasers, was obtained around 230 nm (below threshold) with a narrow lasing spectrum. An internal differential quantum efficiency as high as 90%, a maximum measured external differential efficiency of 73% for a stripe-length of L=1 mm, and a threshold current density for zero total optical loss as low as 7 A/cm 2 per QD layer were achieved.
ISSN:1041-1135
1941-0174
DOI:10.1109/LPT.2005.851949