Study and fabrication of PIN photodiode by using ZnSe/PS/Si structure

In this experiment, the PIN photodiode by using ZnSe/porous Si/Si structure was investigated. The single crystal ZnSe epilayer is successfully grown on porous silicon substrate with CVD system. Indium is as a dopant to reduce the resistivity of ZnSe intrinsic layer. To control the different thicknes...

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Bibliographic Details
Published in:IEEE transactions on electron devices 2000-01, Vol.47 (1), p.50-54
Main Authors: Chang, C.C., Lee, C.H.
Format: Article
Language:English
Subjects:
Devices
Diffusion
Indium
p-i-n photodiodes
Photocurrent
Photodiodes
Photoelectric effect
Silicon
Zinc selenides
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Summary:In this experiment, the PIN photodiode by using ZnSe/porous Si/Si structure was investigated. The single crystal ZnSe epilayer is successfully grown on porous silicon substrate with CVD system. Indium is as a dopant to reduce the resistivity of ZnSe intrinsic layer. To control the different thickness of n-ZnSe layer will change the photocurrent and responsivity of the ZnSe PIN diode. The best diffusion conditions are diffusion temperature of 300/spl deg/C and driving time of 30 min. The responsivity of device is 0.03 A/W. In addition, the dark current of the photodiode is near zero.
ISSN:0018-9383
1557-9646
DOI:10.1109/16.817566