Extremely small-chirp electroabsorption-modulator integrated distributed feedback laser diode with a shallow quantum-well absorption layer

We have developed an extremely small-chirp electroabsorption modulator integrated with a distributed feedback laser diode (EAM-DFB-LD) with a novel shallow quantum-well (QW) absorption layer. By using a shallow QW absorption layer, the estimated lifetime of the photogenerated holes and thus the esti...

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Bibliographic Details
Published in:IEEE journal of quantum electronics 2002-08, Vol.38 (8), p.1075-1080
Main Authors: Miyazaki, Y., Tada, H., Aoyagi, T., Nishimura, T., Mitsui, Y.
Format: Article
Language:English
Subjects:
Absorption
Applied sciences
Carriers
Chirp
Circuit properties
Diode lasers
Diodes
Distributed feedback devices
Distributed feedback lasers
Electric, optical and optoelectronic circuits
Electroabsorption modulators
Electronics
Estimates
Exact sciences and technology
Fundamental areas of phenomenology (including applications)
Integrated optics. Optical fibers and wave guides
Lasers
Life estimation
Lifetime estimation
Optical and optoelectronic circuits
Optical elements, devices, and systems
Optical feedback
Optical modulation
Optical processors, correlators, and modulators
Optics
Other integrated-optical elements and systems
Physics
Quantum electronics
Quantum well lasers
Quantum wells
Semiconductor lasers
laser diodes
Ultraviolet sources
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Description
Summary:We have developed an extremely small-chirp electroabsorption modulator integrated with a distributed feedback laser diode (EAM-DFB-LD) with a novel shallow quantum-well (QW) absorption layer. By using a shallow QW absorption layer, the estimated lifetime of the photogenerated holes and thus the estimated concentration of the holes generated by optical absorption has been reduced to 9% of that for a conventional QW. It was experimentally confirmed that the excess chirp due to the pileup of carriers has been reduced to 10% of that for a conventional QW, and this result is consistent with the estimates. The shallow QW EAM-DFB-LD has shown a chirp parameter |/spl alpha/| less than 0.7 over the entire range of the EAM reverse bias voltage of 0-3 V. Finally, successful 10-Gb/s return to zero transmission has been confirmed through both positive dispersion (+425 ps/nm) and negative dispersion (-425 ps/nm).
ISSN:0018-9197
1558-1713
DOI:10.1109/JQE.2002.801030