Variation of switching mechanism in TiO2 thin film resistive random access memory with Ag and graphene electrodes

[Display omitted] ► Flexible and rigid Ag–TiO2–Ag devices demonstrated. ► Simple control of switching mechanisms via contact metal. ► Graphene–TiO2–Graphene ReRAM with low-current bipolar ReRAM switching achieved. We report the fabrication of resistive random access memory (ReRAM) on both Si and PET...

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Bibliographic Details
Published in:Microelectronic engineering 2013-04, Vol.104, p.42-47
Main Authors: Hu, Yushi, Perello, David, Yun, Minhee, Kwon, Deok-Hwang, Kim, Miyoung
Format: Article
Language:English
Subjects:
Applied sciences
Bipolar
Cross-disciplinary physics: materials science
rheology
Design. Technologies. Operation analysis. Testing
Electrical engineering. Electrical power engineering
Electrode materials
Electrodes
Electronics
Exact sciences and technology
Filament
Fullerenes and related materials
diamonds, graphite
Graphene
Integrated circuits
Integrated circuits by function (including memories and processors)
Materials
Materials science
Physics
Random access memory
ReRAM
Resistive memory
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Silicon substrates
Silver
Specific materials
Switching
Switching mechanism
Thin films
Titanium dioxide
Unipolar
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Summary:[Display omitted] ► Flexible and rigid Ag–TiO2–Ag devices demonstrated. ► Simple control of switching mechanisms via contact metal. ► Graphene–TiO2–Graphene ReRAM with low-current bipolar ReRAM switching achieved. We report the fabrication of resistive random access memory (ReRAM) on both Si and PET flexible substrates using TiO2 as the dielectric spacer between Ag electrodes. Ag/TiO2/Ag ReRAM shows unipolar switching behavior with a ramping rate of 50mV. We further examined the switching mechanism for Ag based ReRAM in the low resistive state (LRS) and high resistive states (HRS). To elucidate the impact of electrode material on the switching mechanism, we fabricated a graphene/TiO2/graphene ReRAM device and observed that the switching behavior changed from unipolar to bipolar due to the unique physical properties of graphene. This study demonstrates ReRAM based on Ag and graphene electrodes on both Si and PET substrates, and directly demonstrates the strong dependence of electrode materials on the switching mechanism.
ISSN:0167-9317
1873-5568
DOI:10.1016/j.mee.2012.11.009