Investigation of nanostructured TiO sigma ub 2surface and interface

The electrical properties of buried solid-solid interfaces are essential to the optimization of devices such as dye-sensitized solar cells and photocatalysts. The degree of fixed charge buildup at these interfaces can be sample-dependent, influenced by only a small fraction of total surface sites, a...

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Bibliographic Details
Published in:AIChE journal 2013-03, Vol.59 (4), p.1049-1049
Main Authors: Sellers, Meredith CK, Seebauer, Edmund G
Format: Article
Language:English
Subjects:
Carrier density
Charge exchange
Construction
Devices
Grain boundaries
Nanostructure
Solid-solid interfaces
Titanium dioxide
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Summary:The electrical properties of buried solid-solid interfaces are essential to the optimization of devices such as dye-sensitized solar cells and photocatalysts. The degree of fixed charge buildup at these interfaces can be sample-dependent, influenced by only a small fraction of total surface sites, and challenging to quantify. This work describes the applicability of photoreflectance spectroscopy (PR) to the characterization of thin film nanostructured TiO2. The approach involves the synthesis of polycrystalline anatase TiO2 on quartz and Si(100) by atomic layer deposition with Ti(OCH(CH sigma ub 3] sigma ub 2] sigma ub 4and H2O as precursors. PR reveals negligible band bending at the TiO2 free surface. A distinct spectral feature at 299.0 plus or minus 0.3 kJ/mol (3.10 plus or minus 0.0031 eV) is attributed to electronic states at the TiO2-Si interface. Temporal variations in the magnitude of this feature are discussed in the context of bulk carrier concentration, solid-solid interface chemical reactions, and charge exchange between interface and grain boundary states and the bulk bands.
ISSN:0001-1541