Preparation and characterization of thin films of ZnO:Al by nebulized spray pyrolysis

• Published in: Applied physics. A, Materials science & processing Materials science & processing, 2004-05, Vol.78 (8), p.1215-1218
• Main Authors: SOLIMAN SELIM, M, CHANDRA SEKHAR, M, RAJU, A. R
• Format: Article
• Language: English
• Subjects: Aluminum; Condensed matter: electronic structure, electrical, magnetic, and optical properties; Doping; Electrical resistivity; Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures; Electronic transport in multilayers, nanoscale materials and structures; Exact sciences and technology; Materials science; Microstructure; Nanocrystalline materials; Nanotubes; Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation; Optical properties of low-dimensional, mesoscopic, and nanoscale materials and structures; Physics; Scanning electron microscopy; Spray pyrolysis; Zinc oxide
• ISSN: 0947-8396; 1432-0630
• DOI: 10.1007/s00339-003-2204-7

Pure and Al-doped nanocrystalline ZnO films have been deposited on Si(100) substrate by nebulized spray pyrolysis. UV--NIR reflections, microstructure and electrical properties were investigated in some detail. The effects of Al doping and annealing at higher temperatures (1073 K) on these properties were investigated. The orientation and the microstructure were revealed by X-ray diffraction patterns and scanning electron microscopy (SEM). The resistivity of the films was inversely proportional to the intensity of the (002) peak. Also, as grain sizes increased, their mobility decreased; therefore, the resistivity value of the films became lower. The values of the non-linear I--V coefficient, {/content/28L0Q9J7MBNUU59K/xxlarge945.gif}, lay in the range 2--4 for all the samples. A great increase in the NIR reflectance (25 to 45%) was observed upon 0.3% Al doping.