Networks of ABA and ABC stacked graphene on mica observed by scanning tunneling microscopy

• Published in: Surface science 2013-04, Vol.610, p.53-58
• Main Authors: Hattendorf, S., Georgi, A., Liebmann, M., Morgenstern, M.
• Format: Article
• Language: English
• Subjects: ABC stacking fault; Condensed matter: electronic structure, electrical, magnetic, and optical properties; Condensed matter: structure, mechanical and thermal properties; Cross-disciplinary physics: materials science; rheology; Electronic structure; Exact sciences and technology; Fermi surfaces; Graphene; High vacuum; Mica; Networks; Physics; Scanning tunneling microscopy; Scanning tunneling spectroscopy
• ISSN: 0039-6028; 1879-2758
• DOI: 10.1016/j.susc.2013.01.005

Graphene flakes are prepared on freshly cleaved mica by exfoliation and studied by scanning tunneling microscopy in ultra high vacuum. On few-layer graphene, a triangular network of partial dislocations separating ABC stacked and ABA stacked graphene was found similar to the networks occasionally visible on freshly cleaved HOPG. We found differences in the electronic structure of ABC and ABA stacked areas by scanning tunneling spectroscopy, i.e., a pronounced peak at 0.25eV above the Fermi level exclusively in the ABA areas, which is shown to be responsible for the different apparent heights observed in STM images. ► STM images on few-layer graphene exfoliated on mica exhibit triangular patterns. ► Pattern is a network of partial dislocations separating ABA and ABC stacked areas. ► STS shows a pronounced peak at 0.25eV exclusively in ABA areas. ► Peak causes apparent height differences in STM images. ► Possibly caused by Fabry–Perot type interference strengthened by lateral confinement