Temperature dependence of quantum lifetime in n-InGaAs/GaAs structures with strongly coupled double quantum wells

Longitudinal ρ xx (B) and Hall ρ xy (B) magnetoresistances are experimentally investigated as a function of in-plane and transverse magnetic fields in n-InGaAs/GaAs nanostructures with strongly-coupled double quantum wells in the temperature range T = 1.8–70 K and magnetic fields B = 0–9.0 T. Experi...

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Published in:Low temperature physics (Woodbury, N.Y.) N.Y.), 2013-01, Vol.39 (1), p.43-49
Main Authors: Arapov, Yu. G., Gudina, S. V., Neverov, V. N., Podgornykh, S. M., Yakunin, M. V.
Format: Article
Language:English
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Gallium arsenide
Gallium arsenides
Magnetic fields
Nanocomposites
Nanomaterials
Nanostructure
Quantum wells
Temperature dependence
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description Longitudinal ρ xx (B) and Hall ρ xy (B) magnetoresistances are experimentally investigated as a function of in-plane and transverse magnetic fields in n-InGaAs/GaAs nanostructures with strongly-coupled double quantum wells in the temperature range T = 1.8–70 K and magnetic fields B = 0–9.0 T. Experimental data on the temperature dependence of quantum lifetime in diffusive (kBT/τtr ≪ 1) and ballistic (kBT/τtr ≫ 1) regimes are reported. It has been found that in the ballistic regime in the temperature range where kBT/EF  
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subjects Gallium arsenide
Gallium arsenides
Magnetic fields
Nanocomposites
Nanomaterials
Nanostructure
Quantum wells
Temperature dependence
title Temperature dependence of quantum lifetime in n-InGaAs/GaAs structures with strongly coupled double quantum wells
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